Submission of Papers
Prospective authors should submit abstract(s) (only in PDF file), two pages in length including all figures and tables, by July 10th, 2025, to a submission World Wide Web site (the site information will be announced at the above symposium web site).
Please check the “Abstract Submission” page.
10th International Symposium on Control of Semiconductor Interface
International Conference on Silicon Epitaxy
International SiGe Technology and Device Meeting
The 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025) will be held in Yokohama-shi, Kanagawa, Japan. Aiming for global collaboration dedicated to semiconductor interfaces, ISCSI series first commenced in Karuizawa, Japan, 1993. Continuing the series in 1996, 1999, 2002 in Karuizawa, in 2007 in Hachiouji, Japan, in 2013 in Fukuoka, Japan, in 2016, 2022 in Nagoya, Japan, and in 2019 in Sendai, Japan. ISCSI has been established itself as a platform where we discuss research results on semiconductor interfaces, exchange information, and promote them for future semiconductor science and technology.
Previous ICSI conferences were held in 1st: Miyagi Zao, Japan, 1999; 2nd: Strasbourg, France, 2001; 3rd: Santa Fe, USA, 2003; 4th: Awaji Island, Japan, 2005; 5th: Marseille, France, 2007; 6th: Los Angeles, USA, 2009, 7th: Leuven, Belgium, 2011, 8th: Kyushu, Japan, 2013; 9th: Montreal, Canada, 2015. Also, previous ISTDM conferences were in 1st: Nagoya, Japan, 2003; 2nd: Frankfurt (Oder); 3rd: Germany, 2004, 4th: Princeton, USA, 2006; 6th: Hsinchu, Taiwan; 2008, 7th: Stockholm, Sweden; 2010, 8th: Berkeley, USA, 2012; 9th: Singapore, 2014; 10th: Nagoya, Japan, 2016. Then, both meetings have been joined as ISTDM/ICSI, those were held in Potsdam, Germany, 2018; Como, Italy, 2023. We have been continuing these meetings to discuss the group-IV semiconductor engineering technologies through materials science to device applications.
Topic Areas
Thin Film Growth and Characterization
Si, Strained Si, Ge, SiGe(C), GeSn, SiC, Diamond, Silicide, Compound semiconductors, III-nitrides, Oxide semiconductors,
High-k insulator, Low-k insulator
Epitaxial growth, CVD, MBE, Selective epitaxy, Atomic layer control, Novel growth technique
Band engineering, Defect engineering, Theory and Simulation, and modeling
Surface and Interface Control
Surface passivation and modification, Surface and interface chemistry
Schottky and ohmic contacts
Atomic scale characterization of surfaces and interfaces
Surface/interface issues in advanced devices
Formation and Characterization of Nanostructures
Nanodots, Nanowires, Superlattice, Self-assembling, Self-organization
Synthesis of low-dimensional materials (2D materials etc.)
Nanoscale characterization, In-situ characterization, Epitaxy equipment technology, Metrology challenges
Process and Device Technology
Impurity diffusion, Dry etching, Microfabrication, Isolation, Heterostructure devices combined with 2D materials, SiGe gate, Source/drain and channel engineering, Base/emitter engineering
SOI, SGOI, III-V on Si, Wafer bonding, Virtual substrates and their Manufacturing
CMOS, HBT, BiCMOS, FeRAM, MODFET, SET, RTD, LED, LD, OEIC
Advanced thermal processing, Source/drain & channel engineering, Base/emitter engineering, Fin FET/GAAFET, Semiconductor-superconductor integration, Photonic devices, Quantum technology
Depending on the topics, the accepted papers will be preferentially assigned to ISCSI, ICSI/ISTDM, or Joint sessions.
ISCSI-X has been endorsed by the following:
Previous Conferences
- ISCSI-IX September 7-9, 2022 Nagoya University, JAPAN.
- ISCSI-VIII November 27-30, 2019 Tohoku University, JAPAN.
- ISCSI-VII / ISTDM2016 June 7-11, 2016 Nagoya University, JAPAN.
- ICSI-8 / ISCSI-VI June 2-7, 2013 Kyushu University, JAPAN.
- ICSI/ISTDM 2023 May 21-25, 2023 Sala Bianca of the Teatro Sociale, Como, ITALY.
Contact Info.
For information regarding ISCSI-X, 2025, please contact to the following email addresses, change [at mark] to @ before sending e-mail.
iscsi_icsi-group@g.ecc.u-tokyo.ac.jp
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